发明名称 PIEZOELECTRIC DEVICE MANUFACTURING METHOD AND PIEZOELECTRIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method that allows easy miniaturization of a piezoelectric device, and a piezoelectric device. <P>SOLUTION: The piezoelectric device 1 comprises: a first electrode 5 formed on one surface of a substrate 3; a piezoelectric substance film 7, such as PZT, that is constituted of a piezoelectric material and is overlaid on the first electrode 5; and a second electrode 11 facing the first electrode 5 across the piezoelectric substance film 7. The method of manufacturing the piezoelectric device 1 comprises the steps of: forming a first dielectric film on the one surface of the substrate 3 where the first electrode 5 is formed and removing the first dielectric film to expose at least part of the first electrode 5; and filling a piezoelectric material into a region where the first dielectric film is removed to form the dielectric substance film 7 in the region. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008227211(A) 申请公布日期 2008.09.25
申请号 JP20070064530 申请日期 2007.03.14
申请人 SEIKO EPSON CORP 发明人 TAKIZAWA TERUO
分类号 H01L41/09;B81B3/00;B81C1/00;H01L41/18;H01L41/22;H01L41/337;H01L41/39;H03H3/02 主分类号 H01L41/09
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