| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To fabricate a semiconductor device which is further integrated, thinned and downsized, and to achieve a high performance and low power consumption in the semiconductor device. <P>SOLUTION: A semiconductor device layer which is peeled from a substrate using a peeling layer is laminated on a semiconductor device layer covered by an inorganic insulating layer which is formed on an another substrate and is planarized. After the semiconductor device layer of an upper layer is peeled from the substrate, the peeling layer is removed to expose an inorganic insulating film which is formed under the semiconductor device layer. The planarized inorganic insulating layer and the inorganic insulating film are closely joined. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
