| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a quartz glass crucible which can suppress the influence of the expansion of crucible bubbles to the utmost when a single crystal is pulled and achieve a high degree of single crystallization, in the manufacture of the silicon single crystal by pulling from a silicon melt. <P>SOLUTION: At high temperatures corresponding to pulling temperatures, the expansion coefficient X2 of bubbles on the inner surface side after the passage of an initial stage is set to 1/3 or less of the expansion coefficient X1 of the bubbles on the inner surface side in the initial stage, or the expansion coefficient Y2 of bubbles on the outer surface side after the passage of an initial stage is set to 1/2 or less of the expansion coefficient Y1 of the bubbles on the outer surface side in the initial stage. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
