| 发明名称 | Perovskite material layer processing | ||
| 摘要 | A method for processing a perovskite photoactive layer. The method comprises depositing a lead salt precursor onto a substrate to form a lead salt thin film, depositing a second salt precursor onto the lead salt thin film, annealing the substrate to form a perovskite material. | ||
| 申请公布号 | US9425396(B2) | 申请公布日期 | 2016.08.23 |
| 申请号 | US201514796468 | 申请日期 | 2015.07.10 |
| 申请人 | Hunt Energy Enterprises L.L.C. | 发明人 | Irwin Michael D.;Chute Jerred A.;Dhas Vivek V. |
| 分类号 | H01L51/46;H01L51/00;C07F7/24;C23C16/50;C23C14/06;H01L51/42;H01G9/20;H01L31/032;H01L31/0256 | 主分类号 | H01L51/46 |
| 代理机构 | Baker Botts L.L.P. | 代理人 | Baker Botts L.L.P. |
| 主权项 | 1. A photovoltaic device comprising: a perovskite material comprising formamidinium lead iodide (FAPbI3) having a cubic crystal structure. | ||
| 地址 | Dallas TX US | ||