SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high-definition semiconductor light-emitting device.SOLUTION: A semiconductor light-emitting device 110 includes: a first semiconductor layer 11 of a first conductivity type; a second semiconductor layer 12 of a second conductivity type; a third semiconductor layer 13 provided between the first semiconductor layer and the second semiconductor layer; and a first transistor 20. The first transistor includes a first gate electrode G1 and a first amorphous semiconductor layer. The first amorphous semiconductor layer overlaps with the first gate electrode in a first direction from the first semiconductor layer toward the second semiconductor layer. The first gate electrode overlaps with the second semiconductor layer in the first direction.SELECTED DRAWING: Figure 1