OPTOELECTRONIC DEVICE

摘要

The optoelectronic device contains a matrix of optoelectronic components including semiconductor optical amplifiers SOAs, the said semiconductor optical amplifiers SOAs containing an active layer of gallium nitride GaN having multiple InGaN/GaAsN or InGaN/AlGaN quantum wells on a substrate of p-doped gallium nitride and covered with a layer of n-doped gallium nitride. The p-doped gallium nitride Ga N substrate forms a column of p-Ga N covered with a layer of an insulator in biocompatible material. The device can contain a matrix having multiple electronic components of different heights. The optoelectronic component can be aphotodiode or a semiconductor optical amplifier SOA. This optoelectronic device can be used in epiretinal or subretinal prostheses. A single epiretinal or subretinal prosthesis can contain a matrix of photodiodes and a matrix of semiconductor optical amplifiers SOAs.