THE METHOD FOR CONTROLLING THICKNESS OF HETEROSTRUCTURED IN-PLANE TRANSITION METAL CHALCOGENIDE THIN FILM

摘要

The present invention relates to a method for controlling thickness of a heterostructured in-plane transition metal chalcogenide (TMC) thin film and an electrical element having a TMC thin film. According to a cooling step of the present invention, a border surface between a first TMC and a second TMC is clearly formed to be checked, and it is expected that the present invention can be usefully used in controlling band gap energy of the TMC material.