| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist pattern forming method and a resist composition, by which a negative pattern excellent in lithographic characteristics in an alkali developing process can be formed.SOLUTION: The resist pattern forming method comprises: a step (1) of forming a resist film by applying a resist composition on a support body, the resist composition comprising a base material component (A) the solubility of which with an alkali developing solution increases by an action of an acid and an acidic compound component (J) that is decomposed by exposure to decrease an acidity; a step (2) of exposing the resist film; a step (3) of baking the film after the step (2) to increase the solubility with an alkali developing solution of the base material component (A) by an action of the acidic compound component (J) in an unexposed portion of the resist film; and a step (4) of forming a negative resist pattern by developing the resist film with an alkali to dissolve and remove the unexposed portion of the resist film. |
