| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a more highly reliable protection film is formed in order to prevent the separation of an insulating layer from a silicon wafer caused by minute cracks that occur in a process of dicing semiconductor chips, and also to provide a manufacturing method therefor. SOLUTION: A plurality of semiconductor devices are formed on the upper surface of a substrate, a groove 6 is formed at the boundary position of the semiconductor devices from the upper surface of the substrate, and at least both sides inside the groove are covered with a protecting thin film layer 8. At that time, a hollow part 8c where the thin film does not exist is formed in the widthwise center of the groove. Then, the lower surface side of the substrate is polished and removed, and each semiconductor device is formed along the hollow part 8c. The thin film layer 8 is formed by applying an organic insulating material. COPYRIGHT: (C)2006,JPO&NCIPI |
