| 摘要 |
A light emitting diode and a method for manufacturing the same are provided to effectively restrain the dislocation between an a-plane(11-20) sapphire substrate and a compound semiconductor layer by forming a SiC buffer layer on the a-plane(11-20) sapphire substrate. An a-plane(11-20) sapphire substrate(100) is prepared. A SiC buffer layer(200) is formed on the a-plane(11-20) sapphire substrate. A compound semiconductor layer including a first conductive-type semiconductor layer(400), an active layer(500), and a second conductive-type semiconductor layer(600)is formed on the SiC buffer layer. The compound semiconductor layer is a compound semiconductor layer represented by AlxInyGa1-x-yN(0<=x,y,x+y<=1). An undoped layer is formed between the SiC buffer layer and the first conductive-type semiconductor layer.
|
