BONDING WIRE FOR SEMICONDUCTOR DEVICE

摘要

Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, the concentration of Ni relative to the entire wire is 0.1-1.2 pcnt by weight, and the thickness of the Pd coating layer is 0.015-0.150 mm.