| 摘要 |
This high purity Ni sputtering target having an average crystal grain size of 1,000 µm or less is characterized in that crystalline orientation of the sputter surface is random, and that crystalline orientation of the center surface of the sputtering target in the thickness direction is also random. It is preferable that the order of peaks do not change even if X-ray diffraction analysis is performed to the powdered sputtering target. With such configuration, the high purity Ni sputtering target, which makes it possible to obtain a stable sputter rate, and can be used for a long period of time, can be obtained. |
