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发明名称
ION SOURCE FOR ION IMPLANTATION
摘要
<p>An ionization source (42) for an ion implantation system (43) includes an ionization chamber (44) having a plurality electron guns (70).</p>
申请公布号
WO2002063653(A1)
申请公布日期
2002.08.15
申请号
US2002003258
申请日期
2002.02.05
申请人
发明人
分类号
主分类号
代理机构
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