发明名称 |
Semiconductor device having self-aligned silicide layer and method thereof |
摘要 |
A semiconductor device having a self-aligned silicide layer and a method thereof are provided. The device includes a device isolation layer formed on the substrate to define an active region and a gate pattern crossing over the active region. A spacer insulating layer is formed on both sidewalls of the gate pattern. First and second salicide layers are formed on an upper portion of the gate pattern, and the first salicide layer is formed on the active region between the spacer insulating layer and the device isolation layer. The first and the second salicide layers on the gate pattern are alternately formed to be connected with each other. The first salicide layer is agglomeratedly formed on a narrow gate pattern, and the second salicide layer is formed within interrupted portions of the first salicide layer, thereby forming a patched salicide layer.
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申请公布号 |
US2006223296(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20050180885 |
申请日期 |
2005.07.13 |
申请人 |
SUN MIN-CHUL;KU JA-HUM;JUNG SUG-WOO;HAN SUNG-KEE;KIM MIN-JOO;ROH KWAN-JONG |
发明人 |
SUN MIN-CHUL;KU JA-HUM;JUNG SUG-WOO;HAN SUNG-KEE;KIM MIN-JOO;ROH KWAN-JONG |
分类号 |
H01L21/3205;H01L21/44;H01L21/4763 |
主分类号 |
H01L21/3205 |
代理机构 |
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地址 |
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