| 摘要 |
A semiconductor device including a bipolar transistor in which the collector resistance. The bipolar transistor includes a first conduction type semiconductor substrate having a main surface. A second conduction type collector region is formed in the semiconductor substrate. A shallow trench isolation structure isolates the main surface of the semiconductor substrate into two insulated active regions. A collector leading portion is formed in one of the active regions. A first conduction type base region and a second conduction type emitter region are formed on the other one of the active regions. The collector region has a first depth from the main surface immediately below the shallow trench isolation structure, and the collector region has a second depth from the main surface immediately below the two active regions. The first depth is less than the second depth.
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