发明名称 LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM
摘要 <p>A laminate which comprises a first silica-based film, a second silica- based film and an organic film, wherein the second silica-based film has a mono-valent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; a method for forming the above laminate which comprises forming a first coating film for the first silica-based film on a substrate, forming a second coating film having a mono-valent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond for the second silica-based film on the first coating film, forming a third coating film for the organic film on the second coating film, and then curing a laminated film comprising the above first to third coating films; an insulating film; a semiconductor device; and a composition for forming the film. The above laminate has a low dielectric constant, and also is excellent in the adhesiveness between the films. ® KIPO & WIPO 2007</p>
申请公布号 KR20070001070(A) 申请公布日期 2007.01.03
申请号 KR20067010583 申请日期 2006.05.30
申请人 JSR CORPORATION 发明人 AKIYAMA MASAHIRO;HATTORI SEITARO;KUROSAWA TAKAHIKO;SEKIGUCHI MANABU;KOKUBO TERUKAZU;MITA MICHIHIRO;YAMANAKA TATSUYA;OBI MASAKI
分类号 B32B27/08;C09D183/14;H01L21/312;H01L21/768 主分类号 B32B27/08
代理机构 代理人
主权项
地址