| 摘要 |
A method for forming a capacitor in a semiconductor device is provided to obtain high capacitance by using a Ta1-xHfO layer including Hf as a dielectric layer instead of a Ta2O5 layer or an HfO2 layer. A storage node contact(4) is formed on a semiconductor substrate(1). A metal storage electrode(10) is formed on the semiconductor substrate to be connected with the storage node contact. A Ta1-xHfO dielectric layer is formed on the metal storage electrode. A metal plate electrode is formed on the Ta1-xHfO dielectric layer. The storage electrode and the plate electrode are formed with one metal selected a group including TiN, Ru, TaN, W, WN, RuO2, Ir, IrO2, and Pt.
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