| 摘要 |
<P>PROBLEM TO BE SOLVED: To constrain the nitriding of the front surface of a substrate which is composed of a diboride single crystal with high lattice matching with a gallium nitride-based compound semiconductor, provide 2-dimensional stratified growth from an early phase of growth, and control polarization from the early phase of growth, thereby reducing failure and growing up a gallium nitride-based compound semiconductor with excellent planarity, high quality, and low dislocation. <P>SOLUTION: A method for manufacturing the gallium nitride-based compound semiconductor includes the steps: (1) supplying a predetermined 13 group element material to one principal plane of a substrate which is composed of the diboride single crystal provided in a film-forming device, so as to deposit a metal layer on the one principal plane of the substrate; (2) supplying nitrogen source in the film-forming device, so as to nitride the metal layer; and (3) depositing the gallium nitride-based compound semiconductor on the one principal plane of the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT |
