| 摘要 |
<p>A thin film transistor is provided to avoid a contact defect between a source/drain electrode and a semiconductor layer by forming a gate insulation layer whose part is made of an inorganic insulation layer and by forming an organic insulation layer in a region except the inorganic insulation layer. A source/drain electrode(40,50), a semiconductor layer(60) and a gate electrode(20) are formed on a substrate(10). An inorganic insulation layer(30) is formed between the semiconductor layer and the gate electrode. An organic insulation layer(31) is formed in a region except the inorganic insulation layer. The semiconductor layer can be one selected from a group of amorphous silicon, polycrystalline silicon, compound semiconductor, oxide semiconductor and organic semiconductor. The substrate can be one of plastic, a metal thin film or micro glass.</p> |
