发明名称 積層型半導体装置および積層型半導体装置の制御方法
摘要 Provided is a multi-layered semiconductor apparatus with improved heat diffusion and improved heat release. The multi-layered semiconductor apparatus (100) includes a plurality of layered semiconductor chips (20-1, 20-2) that each include at least one circuit region, and the circuit regions are arranged such that heat generated by the circuit regions as a result of the circuit regions being driven is spread out. The multi-layered semiconductor apparatus (100) further comprises a heat releasing section (50) that releases the heat generated by the circuit regions, and the circuit regions are arranged such that there is less thermal resistance between the heat releasing section and circuit regions that generate a greater amount of heat per unit area.
申请公布号 JP5928541(B2) 申请公布日期 2016.06.01
申请号 JP20140165206 申请日期 2014.08.14
申请人 株式会社ニコン 发明人 菅谷 功;岡本 和也
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
代理机构 代理人
主权项
地址