| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer without generating a blur impairing the appearance on the back side of a silicon wafer (PBS wafer) having a polycrystalline silicon film on the back side.SOLUTION: When forming a silicon epitaxial film on the front side of a PBS wafer by using an epitaxial growth device including reaction chambers 1a, 1b for growing an epitaxial film, a wafer transfer chamber 2 for conveying a wafer into the reaction chamber, and partition movable mechanisms 3a, 3b at the interconnection part of the reaction chamber and the transfer chamber, the partition movable mechanisms are opened while raising the pressure in the wafer transfer chamber above the pressure in the reaction chamber. Subsequently, the PBS wafer is placed on the wafer support member in the reaction chamber, and the movable mechanism is closed before forming an epitaxial film. Pressure difference in the wafer transfer chamber and the reaction chamber is preferably in a range of 67-267 Pa(0.5-2 torr). |
