| 摘要 |
By forming a portion (209A, 309A, 409A) of a PN junction (209, 309, 409) within strained silicon/germanium material (207, 307, 407) in SOI transistors (200, 300, 400) with a floating body (221, 321) architecture, the junction leakage may be significantly increased, thereby reducing floating body effects. The positioning of a portion (209A, 309A, 409A) of the PN junction (209, 309, 409) within the strained silicon/germanium material (207, 307, 407) may be accomplished on the basis of implantation and anneal techniques, contrary to conventional approaches in which in situ doped silicon/germanium is epitaxially grown so as to form the deep drain and source regions. Consequently, high drive current capability may be combined with a reduction of floating body effects. |
