发明名称 |
SEMICONDUCTOR OPTICAL AMPLIFIER, AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor optical amplifier achieving superior element characteristics with a high gain saturation level and a small waveform distortion and having reliability over a long period of time. SOLUTION: The semiconductor optical amplifier is composed of: a semiconductor substrate 21 of a first conductivity type; a ridge mesa of a prescribed width composed of a part of the semiconductor substrate 21 and the respective layers of an active layer 22 and a clad layer 23 of a second conductivity type formed on the semiconductor substrate 21; high resistance current block layers 24 respectively provided so as to be in contact with both side faces of the ridge mesa; a DBR layers 25 composed of a plurality of semiconductor layers extended in a direction roughly parallel to the ridge mesa on the semiconductor substrate 21 and cyclically arranged in a direction orthogonal to an optical waveguide direction; a first electrode 26 provided on a surface on the opposite side of a surface where the active layer 22 is formed of the semiconductor substrate 21; and a second electrode 27 provided on the clad layer 23 of the second conductivity type. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2009135555(A) |
申请公布日期 |
2009.06.18 |
申请号 |
JP20090073631 |
申请日期 |
2009.03.25 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
GOTODA MITSUNOBU;NISHIKAWA TOMOSHI;NISHIMURA TETSUYA;TOKUDA YASUKI |
分类号 |
H01S5/50 |
主分类号 |
H01S5/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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