DOUBLE PATTERNING METHOD BY LITHOGRAPHY

摘要

PROBLEM TO BE SOLVED: To maintain an ideal critical dimension under the conditions that a photoresist layer for producing a fine integrated circuit layout normally has a high aspect ratio. SOLUTION: The method of lithography patterning includes: a step of forming a first photoresist layer having at least one opening on a substrate; a step of curing the first photoresist layer; a step of forming a second photoresist layer on the substrate; a step of forming a material layer on the substrate; and a step of removing the first and second photoresist layers to expose the substrate. COPYRIGHT: (C)2009,JPO&INPIT