| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystallization method removing a drawback of a method following a conventional technique. SOLUTION: In order to crystallize a material, a thin layer 3 of an amorphous or polycrystalline material is deposited on at least one region of a surface of an upper part 2 of a substrate 1. Then, a metal layer 4 is deposited on at least one region of the thin layer 3. Then, a heat treatment F2 is carried out to allow crystal growth of the material of the thin layer 3, and causes rapid temperature rise of the upper part 2 of the substrate 1 and heat transfer from an interface between the upper part 2 of the substrate 1 and the thin layer 3 to an interface between the thin layer 3 and the metal layer 4 until a liquid or overmelted liquid state is achieved. COPYRIGHT: (C)2009,JPO&INPIT
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