发明名称 エピタキシャル構造体の製造方法
摘要 The disclosure relates to a method for making an epitaxial structure. A carbon nanotube film is placed on an epitaxial growth surface of a substrate. The carbon nanotube film defines a number of apertures so that part of the epitaxial growth surface is exposed from the apertures to form a first exposed part. A mask preform layer is deposited on the epitaxial growth surface to cover the carbon nanotube film. A thickness of the mask preform layer is smaller than a thickness of the carbon nanotube film so that a first part of the mask preform layer is deposited on surfaces of the carbon nanotube film and a second part of the mask preform layer is deposited on the first exposed part of the epitaxial growth surface. The carbon nanotube film is removed. An epitaxial layer is grown on the epitaxial growth surface.
申请公布号 JP5951838(B2) 申请公布日期 2016.07.13
申请号 JP20150057200 申请日期 2015.03.20
申请人 ツィンファ ユニバーシティ;鴻海精密工業股▲ふん▼有限公司 发明人 魏 洋;▲ハン▼ 守善
分类号 H01L21/205;C01B31/02;C23C16/02;C23C16/34;C30B25/04;C30B29/38;H01L21/20;H01L21/3065 主分类号 H01L21/205
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