发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device that is suitable for miniaturization is provided. A semiconductor device including a first element, a first insulator over the first element, a first barrier film over the first insulator, a first conductor over the first barrier film, a second barrier film over the first conductor, a second insulator over the second barrier film, and a semiconductor over the second insulator is provided. The first conductor is surrounded by the first barrier film and the second barrier film. |
申请公布号 |
SG11201604650S(A) |
申请公布日期 |
2016.07.28 |
申请号 |
SG11201604650S |
申请日期 |
2014.12.15 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYAIRI, HIDEKAZU;SASAGAWA, SHINYA |
分类号 |
H01L29/786;G02F1/1368;H01L21/28;H01L21/336;H01L21/8242;H01L21/8247;H01L27/105;H01L27/108;H01L27/115;H01L29/417;H01L29/423;H01L29/49;H01L29/788;H01L29/792;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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