发明名称 BUILT-IN BYPASS DIODE
摘要 A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.
申请公布号 SG11201605042W(A) 申请公布日期 2016.07.28
申请号 SG11201605042W 申请日期 2014.12.12
申请人 SUNPOWER CORPORATION 发明人 SMITH, DAVID D.;RIM, SEUNG BUM
分类号 H01L31/044 主分类号 H01L31/044
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