NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING THE NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory device includes a memory cell array having memory cells, a row decoder circuit connected to the memory cells through word lines, a page buffer circuit connected to the memory cells through bit lines, and a control circuit controlling the row decoder circuit and the page buffer circuit to repeatedly perform an erase loop including an erase and an erase verification with respect to the memory cells. The control circuit is configured to select one of an increase and a decrease of an erase voltage according to a result of the erase verification of a current erase loop and apply the controlled erase voltage to the memory cells in the erase operation of a subsequent erase loop.

主权项

1. A nonvolatile memory device comprising:
a memory cell array including memory cells; a row decoder circuit connected to the memory cells through word lines; a page buffer circuit connected to the memory cells through bit lines; and a control circuit controlling the row decoder circuit and the page buffer circuit to repeatedly perform an erase loop including an erase and an erase verification with respect to the memory cells, wherein the control circuit is configured to select one of an increase and a decrease of a controlled erase voltage according to a result of an erase verification of a current erase loop and apply the controlled erase voltage to the memory cells in an erase operation of a subsequent erase loop.