| 摘要 |
In the present invention, the thickness of an insulating resin 6, in an area Y1 of an active matrix substrate 2 on which a semiconductor film 3 is formed, is equal to the thickness in an area X1 of the active matrix substrate 2 on which the semiconductor film 3 is not formed. On this account, in a flat panel image sensor 1, stress generated inside the insulating resin 6 is reduced, warpage of the active matrix substrate 2 is prevented in advance, and impact resistance of the flat panel image sensor 1 is improved.
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