| 摘要 |
A method of fabricating a titanium nitride layer for a storage node in a semiconductor memory device is provided to remove effectively Cl from the titanium nitride layer by performing an SFD(Sequential Flow Deposition) method. A wafer is loaded into a reaction chamber in order to form a titanium nitride layer for a storage node. A fist source gas supply process is performed to implant a titanium source gas and a nitride source gas into the reaction chamber. A first purging process is performed to purge the inside of the reaction chamber by supplying a hydrogen gas into the reaction chamber. A second source gas supply process is performed to implant the nitride source gas into the reaction chamber. A second purging process is performed to purge the inside of the reaction chamber by supplying a hydrogen gas and a nitrogen gas into the reaction chamber.
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