A METHOD FOR FORMING DEEP TRENCH ISOLATION STRUCTURE

摘要

A method for forming a deep trench isolation structure is provided to improve productivity and enhance reliability by simplifying a semiconductor manufacturing process. A thermal oxidation mask is formed on a first region of a semiconductor substrate(50) in order to form an inactive region. An etching mask is formed on the thermal oxidation mask in order to expose a second region within the first region. A deep trench isolation region is formed by etching the semiconductor substrate of the second region exposed by the etching mask. The deep trench isolation region is filled with a filler. An inactive oxide layer(66) is formed by oxidizing thermally the first region.