CHEMICAL MECHANICAL POLISHING COMPOSITION FOR METAL CIRCUIT COMPRISING ALUMINIUM HYDROXIDE

摘要

Provided is a chemical mechanical polishing composition for a metal wiring which is excellent in particle stability and dispersion stability, is lowered in density and reduces scratch, dishing and erosion. The chemical mechanical polishing composition comprises 0.1-30 wt% of an aluminum hydroxide abrasive; and 0.2-5 wt% of a chelating agent. Preferably the aluminum hydroxide abrasive has a density of 2.4-3.5 g/cm^3 and a Mohs hardness of 2.5-7 Mohs; and the chelating agent is selected from the group consisting of ammonium oxalate, tartaric acid, nitrilotriacetic acid, aminodiacetic aid, carboxylic acid amine, aminoacetic acid and ammonium citrate.