<p>Disclosed is a method for forming a crystalline film mainly composed of PZT(111) on a foundation film mainly composed of an (111)-oriented noble metal. This film-forming method comprises a step for forming an oxide film having an interplanar spacing closer to that of the PZT(111) than that of the noble metal on the surface of the foundation film, and a step for forming the crystalline film on the surface of the oxide film by an MOCVD method.</p>
