| 摘要 |
A method of fabricating a semiconductor device according to an embodiment of the present invention includes: forming a film to be processed having a first film thickness on a semiconductor substrate; forming a region, within the film to be processed, having a second film thickness thinner than the first film thickness by processing a part of the film to be processed; processing the film to be processed having the region of the second film thickness formed therein by utilizing a dry etching method while a change in characteristic value of a plasma is monitored; detecting a first timing at which a member right under the region, within the film to be processed, which had the second film thickness before the processing performed by utilizing the dry etching method begins to be exposed in accordance with the change in characteristic value of the plasma during the processing performed by utilizing the dry etching method; and estimating a second timing right before a member right under a region, of the film to be processed, which had the first film thickness before the processing performed by utilizing the dry etching method begins to be exposed in accordance with the first timing, and changing an etching condition for the dry etching over to another one at the second timing.
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