| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a gettering region applicable to a three-dimensional structure, such as, a laminated semiconductor package and/or element, and which minimizes contamination. <P>SOLUTION: An embodiment of the semiconductor device includes a semiconductor substrate 100, a first insulating layer 150 formed over the semiconductor substrate 100, and a first semiconductor layer 200 formed over the first insulation layer 150. At least one gettering region 165, 165' is formed in at least one of the first insulating layer 150 and a second semiconductor layer 150'. The gettering region 165, 165' includes a plurality of gettering sites 170, 170', and at least one gettering site includes one of a precipitate, a dispersoid, an interface with the dispersoid, a stacking fault and a dislocation. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
