发明名称 |
Preßgespritztes Leistungsbauelement |
摘要 |
A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t 1 of the chip and the thickness t 2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t 2 /t 1 >=5. Furthermore, the thermal expansion coefficient alpha 1 of the heat sinks and the thermal expansion coefficient alpha 2 of the mold resin satisfy the equation of 0.5<=alpha 2/alpha1 <=1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra<=500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder. |
申请公布号 |
DE10234155(B4) |
申请公布日期 |
2009.03.05 |
申请号 |
DE2002134155 |
申请日期 |
2002.07.26 |
申请人 |
DENSO CORP. |
发明人 |
HIRANO, NAOHIKO;TESHIMA, TAKANORI;NAKASE, YOSHIMI;YAGI, KENJI;OOKURA, YASUSHI;MAMITSU, KUNIAKI;NOMURA, KAZUHITO;FUKUDA, YUTAKA;SUZUKI, MIKIMASA;NORITAKE, CHIKAGE |
分类号 |
H01L23/36;H01L21/301;H01L21/56;H01L23/28;H01L23/367;H01L23/373;H01L23/433;H01L23/48;H01L29/78 |
主分类号 |
H01L23/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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