发明名称 |
Titania-doped quartz glass and making method |
摘要 |
Titania-doped quartz glass is manufactured by mixing a silicon-providing reactant gas and a titanium-providing reactant gas, preheating the reactant gas mixture at 200-400° C., and subjecting the mixture to oxidation or flame hydrolysis. A substrate of the glass is free of concave defects having a volume of at least 30,000 nm3 in an effective region of the EUV light-reflecting surface and is suited for use in the EUV lithography. |
申请公布号 |
US9346700(B2) |
申请公布日期 |
2016.05.24 |
申请号 |
US201213569429 |
申请日期 |
2012.08.08 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
Maida Shigeru;Otsuka Hisatoshi |
分类号 |
C03B19/14;C03C3/06;G03F1/24;B82Y10/00;B82Y40/00 |
主分类号 |
C03B19/14 |
代理机构 |
Westerman, Hattori, Daniels & Adrian, LLP |
代理人 |
Westerman, Hattori, Daniels & Adrian, LLP |
主权项 |
1. A method for manufacturing a titania-doped quartz glass, comprising the steps of:
mixing a silicon-providing reactant gas and a titanium-providing reactant gas, heating the reactant gas mixture at 200 to 400° C., subjecting the mixture to oxidation or flame hydrolysis with the aid of a combustible gas and a combustion-supporting gas, depositing a titania doped quartz glass, and forming an EUV lithography member having a surface for reflecting EUV light, the surface being free of concave defects having a volume of at least 30,000 nm3 and an aspect ratio of up to 10 in an effective region. |
地址 |
Tokyo JP |