发明名称 |
THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD |
摘要 |
In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost. |
申请公布号 |
EP2110855(A4) |
申请公布日期 |
2010.02.24 |
申请号 |
EP20080704196 |
申请日期 |
2008.01.30 |
申请人 |
BRIDGESTONE CORPORATION |
发明人 |
SHIINO, OSAMU;IWABUCHI, YOSHINORI;SAKURAI, RYO;FUNAKI, TATSUYA |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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