| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing a single crystal GaN film being nearly intrinsic and for selectively doping to make the formed film n-type or p-type. SOLUTION: The apparatus for producing a highly insulative single crystal gallium nitride thin film has a substrate 19 on which a film is deposited, a molecular beam epitaxial growth chamber 21 in which the substrate is provided, an electron cyclotron resonance microwave plasma source 13, 15 for allowing an active species which is one of the components of the film to move toward the substrate 19 and means 22, 23 for allowing the beam of the other component of the film to move toward the substrate 19 so as to vapor deposit the film on the substrate 19. |
