发明名称 |
Power semiconductor switching element |
摘要 |
<p>A semiconductor element of this invention includes a drift layer (12) of a first conductivity type formed on a semiconductor substrate (11) of the first conductivity type, a well layer (13) of a second conductivity type selectively formed in the surface of the drift layer (12), a source layer (14) of the first conductivity type selectively formed in the surface of the well layer (13), a trench (15) formed to reach at least the inside of the drift layer (12) from the surface of the source layer (14) through the well layer (13), a buried electrode (17) formed in the trench (15) through a first insulating film (16), and a control electrode (19) formed on the drift layer (12), the well layer (13), and the source layer (14) through a second insulating film (18). <IMAGE></p> |
申请公布号 |
EP1168455(A2) |
申请公布日期 |
2002.01.02 |
申请号 |
EP20010114892 |
申请日期 |
2001.06.29 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OMURA, ICHIRO;SAITO, WATARU;OGURA, TSUNEO;OHASHI, HIROMICHI;SAITO, YOSHIHIKO;TOKANO, KENICHI |
分类号 |
H01L21/265;H01L21/336;H01L29/06;H01L29/08;H01L29/40;H01L29/417;H01L29/739;H01L29/772;H01L29/78;H01L29/872;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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