APPARATUS AND METHOD OF LASER IRRADIATING

摘要

PROBLEM TO BE SOLVED: To provide an apparatus of laser irradiating which can perform a laser treatment uniformly to a whole semiconductor film surface and to provide a method of laser irradiating. SOLUTION: A laser beam oscillated from a large laser crystal of a wavelength region and a beam homogenizer are used. Since the laser beam with the large wavelength region has weak coherence, a semiconductor film is not made to produce an interference pattern by an interference. Moreover, since a line beam exceeding several meters in the length of a transverse axis can be formed, the throughput of a laser anneal process is improved. COPYRIGHT: (C)2006,JPO&NCIPI