| 摘要 |
PROBLEM TO BE SOLVED: To provide a voltage regulating diode which can stably operate without being influenced by ions contained in an insulating film or a protective film formed on the surface of a semiconductor substrate and withstands high voltage, and to provide its manufacturing method. SOLUTION: The voltage regulating diode of reach-through type is provided with an n-type semiconductor substrate 1 of the first conductivity type, an epitaxial layer 2 of the first conductivity type, a first semiconductor region 3 of the second conductivity type which is formed in the epitaxial layer 2, a second semiconductor region 5 of the second conductivity type which surrounds the first semiconductor region 3 and is formed in a position spaced from the first semiconductor region 3, an anode electrode 8 which is formed on the major surface of the epitaxial layer 2, and a cathode electrode 9 which is formed on the surface other than the major surface of the n-type semiconductor substrate 1. The bottom of the second semiconductor region 5 is in a position shallower than the bottom of the first semiconductor region 3 from the major surface of the epitaxial layer 2. COPYRIGHT: (C)2006,JPO&NCIPI
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