| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory that can prevent an erroneous write operation and can be made small. SOLUTION: Each of multiple memory areas 3, which the magnetic memory 1 is equipped with, has a TMR element 4 containing a first magnetic layer 41 in which the magnetization direction A changes pursuant to external magnetic fieldsϕ<SB>1</SB>andϕ<SB>2</SB>, and a wiring 31a extending along the first magnetic layer 41; provides the first magnetic layer 41 with the external magnetic fieldsϕ<SB>1</SB>andϕ<SB>2</SB>through write currents I<SB>w1</SB>and I<SB>w2</SB>, while the wiring section 31a is electrically connected to one edge of the TMR element 4; and is electrically connected to an intra-region wiring 31 that passes a read-out electric current I<SB>r</SB>from the wiring section 31a to the TMR element 4 and one edge of the intra-region wiring 31, and has a read-write transistor 32 that controls the conduction of the write currents I<SB>w1</SB>and I<SB>w2</SB>, and the read current I<SB>r</SB>at the intra-region wiring 31. COPYRIGHT: (C)2006,JPO&NCIPI
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