| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a cylindrical capacitor for preventing closing of a cylinder by solving the problem, wherein since the clearance between the opposite sidewalls of a cylinder at the lower part of the vertical direction is narrow, an HSG is brought into contact, the cylinder is closed in the middle, capacitor will not be formed in the lower region of the closed section, and since a desired capacitative value is not obtained, operation of the semiconductor becomes defective, and to provide a semiconductor device equipped with this. SOLUTION: Amorphous silicon of the lower electrode of a cylindrical capacitor is configured as a two-layer structure of a heavily-doped layer and a lightly-doped layer, the lightly-doped layer in the lower region of the cylinder is etched, and the crystal grain diameter of HSG formed in the lower region is reduced so that the closing of the cylinder can be prevented. COPYRIGHT: (C)2006,JPO&NCIPI
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