SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Methods for forming semiconductor memory structures including air gaps between adjacent gate structures are provided. The volume of the air gaps is maximized and the width thereof made uniform in order to minimize the parasitic capacitance and any variance therein between the gate structures. The methods include forming an insulation layer between adjacent gate structures and subsequently etching the insulation layer to leave an air gap. Devices fabricated in accordance with the methods are also provided.