| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which carrier mobility is enhanced by making a stress act on a channel more effectively. SOLUTION: The semiconductor device comprises a semiconductor fin provided to project from an insulation layer and to extend in the first direction x, a gate electrode provided at least oppositely to the side face of a channel portion in the semiconductor fin and extending in the second direction y intersecting the first direction x substantially perpendicularly, an insulating film interposed between the semiconductor fin and the gate electrode, a spacer layer provided above the channel portion, a sidewall insulation layer provided on the side face of the spacer layer along the second direction y, and a stress liner provided to cover the sidewall insulation layer and the spacer layer and having an initial stress for distorting the semiconductor fin wherein the thickness t of the sidewall insulation layer in the first direction is more than 45 nanometer (nm) and the height h1 of the spacer layer is more than 105 nanometer (nm). COPYRIGHT: (C)2007,JPO&INPIT
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