| 摘要 |
A solid-state imaging device, such as a CMOS sensor, includes a unit pixel having a charge generation unit for generating signal charge, a floating diffusion for accumulating the signal charge generated by the charge generation unit, a transfer gate transistor for transferring the signal charge in the charge generation unit to the floating diffusion, a reset transistor for resetting the floating diffusion, and an amplifying transistor for generating a signal in accordance with the signal charge generated by the charge generation unit and outputting the signal to a vertical signal line. The width of a reset pulse for driving the reset transistor is sufficiently decreased to, for example, less than or equal to 1/2, and preferably less than or equal to 1/5 of the response time of a signal that has occurred on the vertical signal line in response to the reset pulse. |
