| 摘要 |
PURPOSE: A method for manufacturing a high concentration n-type nitride semiconductor and a nitride light emitting device thereby are provided to dope Si with a higher concentration on the n-type nitride semiconductor by alleviating the tensile strain of a n-type nitride layer. CONSTITUTION: A nitride light emitting device includes a thin film layer which is an n-type nitride semiconductor layer(4). The n-type nitride semiconductor layer, an active layer(6) and a p-type nitride semiconductor layer(7) are successively formed on a substrate. A p-type pad electrode(9) is arrange on the p-type electrode. An n-type pad electrode(5) is arranged on the n-type nitride semiconductor. The p-type electrode which is a transparent electrode is formed on the overall side of the p-type nitride semiconductor.
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