| 摘要 |
<P>PROBLEM TO BE SOLVED: To keep a void from being formed in a contact plug by forming an inclination at a side wall of a contact hole with good controllability. <P>SOLUTION: The manufacturing method of a semiconductor device comprises the steps of: forming a first contact hole (dashed line) at an insulator film 10; forming a second contact hole 13 whose inner wall is inclined by applying chemical dry etching where the upper the insulator film which constitutes an inner wall of the first contact hole is, the larger the etching amount is; and forming a contact plug in the second contact hole. <P>COPYRIGHT: (C)2013,JPO&INPIT |
